polycrystalline substrate
英
美
网络 多晶衬底
双语例句
- Growing properties of the diamond crystals and the polycrystalline films on the edges of substrate
金刚石晶体和薄膜在基底边缘的生长特性 - Study on preparation technology of polycrystalline silicon thin film solar cells based on SSP substrate
颗粒硅带为衬底的多晶硅薄膜太阳电池制备工艺 - We have calculated the strain energy densities for various grain orientations for a fcc polycrystalline film on a substrate.
对附着在基体上面心立方多晶薄膜中不同取向晶粒的应变能密度进行了计算。 - A new method is presented to measure the equivalent stress-equivalent uniaxial strain curve, yield strength and strain-hardening exponent of a polycrystalline film on substrate using X-ray stress analysis and strain gauge techniques.
提出了一种利用X射线应力分析技术和应变电测法测量附着膜的等效应力&等效单轴应变、屈服强度和加工硬化指数的方法。 - A series of undoped ZnO polycrystalline films were grown on Si substrates by thermal decomposition method with Zn ( CH3COO) 2 · 2H2O as source at different substrate temperatures.
以Zn（CH3COO）2·2H2O为蒸发源，利用热蒸发分解法在Si衬底上沉积了多晶ZnO薄膜。 - The polycrystalline Fe_3O_4 film was prepared in O2 and Ar mixed atmosphere by facing-target reactive sputtering without substrate heating during the deposition.
在基底不加热的条件下，用对向靶反应溅射法在氩气和氧气的混合气氛中制备了多晶Fe3O4薄膜。 - PECVD method is used to deposit polycrystalline silicon thin films at low temperature. The influences of deposition parameters include temperature, substrate, rf power, ratio of SiH_4 and doping on the crystalline and electric character was studied systematically.
本文采用PECVD方法，系统研究了沉积温度、衬底、射频功率、氢稀释比、磷掺杂等沉积参数对多晶硅薄膜结晶状态及光电性能的影响，并对沉积出的多晶硅薄膜进行了固相晶化。 - Based on elastic theory and yield strength formula of polycrystalline films, the strain-energy densities in differently oriented grains have been calculated for a bcc-polycrystalline film on a substrate.
根据弹性理论和多晶膜的屈服强度公式，计算了附着在基体上体心立方多晶薄膜中不同取向晶粒中的应变能密度。 - Development of Polycrystalline Silicon Micro-electrode Array on Silicon Substrate
多晶硅微型电极阵列的研制 - Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost.
从简化步骤、降低成本的角度出发，采用快速热化学气相沉积（RTCVD）法在低纯颗粒带硅（SSP）衬底上制备出了多晶硅薄膜太阳电池。 - The results of recrystallization of polycrystalline Si on SiO_2 by both CW Ar laser and CO_2 laser irradiation are compared. Different effects of radial cooling along specimen surface and vertical cooling through into the substrate during the recrystallization are analysed.
本文比较了连续Ar离子激光器和CO2激光器辐照下多晶硅在SiO2上的再结晶，分析了纵向散热和横向散热对再结晶的不同作用。 - Grain boundary diffusion is dominating for copper diffusion in polycrystalline Ta and TaN films. At high temperature, copper diffuses towards Si substrate through these fast diffusion paths and silicides of Ta and Cu are formed. Based on the grain boundary theory of J.
Cu在溅射生长的多晶Ta、TaN阻挡层中的扩散以晶界扩散为主，在高温退火条件下，Cu通过这种快速通道向Si衬底扩散，形成了Cu和Ta的硅化物以及硅的氧化物。 - It is shown that, the yield strength of a polycrystalline film is determined by two affecting factors ( orientation of grains and type of dislocations) and three strengthening factors ( passivated layer strengthening, substrate strengthening, and grain-size strengthening).
该式表明多晶薄膜的屈服强度由两个影响因子（晶粒取向和位错类型）和三个强化因子（钝化层强化，基体强化和晶粒强化）确定。 - Polycrystalline silicon thin film solar cells with efficiency of 10% on simulant non-silicon substrate
模拟非硅衬底上转换效率10%的多晶硅薄膜太阳电池 - The Polycrystalline silicon films have been obtained under the substrate temperature of 200 ℃ using SiCl 4/ H 2 mixture gases in a conventional radio frequency glow discharge plasma chemical vapor deposition system.
以SiCl4H2为气源，用等离子体化学气相沉积技术，在衬底温度仅为200℃时能获得多晶硅薄膜。 - A series of La2/ 3Sr1/ 3MnO3 polycrystalline films with various thickness t were prepared on Si ( 100) substrate with oxidized surface using magnetron sputtering technique.
运用磁控溅射的方法，在表面氧化的Si（100）基片上制备了一系列不同厚度的La2/3Sr1/3MnO3多晶薄膜。 - A simple expression for the yield strength of a thin polycrystalline film attached to a substrate and with a passivated layer has been derived from a relationship between stress work for dislocation moving and strain energy.
从位错运动的应力功和应变能关系导出了附着在基体上并有钝化层薄膜的屈服强度公式。 - In this paper, the growth of polycrystalline diamond films on M 0 substrate by HFCVD was studied.
研究用热灯丝化学气相沉积（HFCVD）法在M0衬底上生长多晶金刚石膜。 - Preparation of Polycrystalline Silicon Thin Films on Cheap Silicon Sheets from Powder Substrate by PECVD and Introducing Aluminum Twice
以高性价比颗粒硅带为衬底多晶硅薄膜的二次引铝低温制备法 - Surface roughening of Cu and Ta polycrystalline thin films deposited by magnetron sputtering at different homologous temperature T-s/ T-m ( T-s and T-m are the substrate temperature and the material melting point, respectively) have been studied using atomic force microscopy.
采用原子力显微镜研究了磁控溅射多晶薄膜表面粗化行为对归一化沉积温度Ts/Tm（Ts是沉积温度，Tm是材料熔点）的依赖性与薄膜生长方式转变行为。 - The polycrystalline thin films were grown by Rapid Thermal Chemical Vapor Deposition ( RTCVD) on SSP ribbons, and the polycrystalline silicon thin film solar cell on SSP substrate was prepared. The efficiency of the cell reaches 2 93%.
以SSP为衬底，采用快速热化学气相沉积（RTCVD）法生长多晶硅薄膜，并以此制作出效率为293%的颗粒硅带多晶硅薄膜太阳电池，这在国内属首先。 - Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation PROGRESS OF GALLIUM NITRIDE THIN FILM
采用金属镓层氮化技术在石英衬底上生长多晶GaN氮化镓薄膜研究进展 - When PEG is used, the coating on Ni-P substrate is dominated by ( 220) crystal orientation, and on polycrystalline copper substrate, ( 211) crystal orientation is dominant, resulting in non-uniform grain sizes.
PEG使NiP上的镀层以（220）晶面为主，在多晶铜基底上变为（211）晶面为主，晶粒的大小不均匀。 - In different sputtering conditions, the prepared ZnO: Al thin film were hexagonal wurtzite polycrystalline structure and showed an oriented film growth, with the crystallographic c-axis along ( 002) crystal plane perpendicular to the substrate surface.
在不同溅射条件下，制备的ZnO：Al薄膜为六方铅锌矿多晶结构并沿c轴（002）垂直于衬底表面择优取向性生长。 - Most researchers focus on the preparation of polycrystalline ITO thin films with the substrate temperature at 200400 ℃, to study the process and optimize their optical and electrical properties.
大多数研究者都关注于在200～400℃的基底温度下制备多晶ITO薄膜，研究其工艺，优化其光学和电学性质。 - Polycrystalline Diamond Compact ( PDC) not only has high hardness and high wearing resistance, due to the reasons for cemented carbide substrate, but also has the advantage of strong shock resistance.
聚晶金刚石复合片不仅具有金刚石的高硬度和高耐磨性，由于硬质合金基体的原因，还具有抗冲击性能强的优点。 - Recrystallization acceleration of columnar crystal copper by ion irradiation led to the abnormal increasement of diffusion coefficient. No effect of ion irradiation on diffusion was found in polycrystalline copper substrate couples.
在以柱晶铜为基体的扩散偶中，离子辐照对铜的再结晶行为产生了显著的加速作用。 - The potential use of polycrystalline diamond as ceramic substrate, heat sink materials, and microwave window materials needs an urgent research and development.
金刚石基多晶材料潜在应用亟待研究和开发，例如作为陶瓷基板、热沉材料、微波窗口材料等。